Invention Grant
- Patent Title: Chemical vapor deposition method for fabricating two-dimensional materials
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Application No.: US15587551Application Date: 2017-05-05
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Publication No.: US10062568B2Publication Date: 2018-08-28
- Inventor: Nigel Pickett , Ombretta Masala , Nicky Prabhudas Savjani
- Applicant: NANOCO TECHNOLOGIES, LTD.
- Applicant Address: GB Manchester
- Assignee: Nanoco Technologies, Ltd.
- Current Assignee: Nanoco Technologies, Ltd.
- Current Assignee Address: GB Manchester
- Agency: Blank Rome, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C30B29/46 ; C23C16/30 ; C23C16/46 ; C30B29/60

Abstract:
A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSe2 and MoSe2, is based on a chemical vapor deposition approach that uses H2Se or alkyl or aryl selenide precursors to form a reactive gas. The gaseous selenium precursor may be introduced into a tube furnace containing a metal precursor at a selected temperature, wherein the selenium and metal precursors react to form metal chalcogenide monolayers.
Public/Granted literature
- US20170330748A1 CHEMICAL VAPOR DEPOSITION METHOD FOR FABRICATING TWO-DIMENSIONAL MATERIALS Public/Granted day:2017-11-16
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