Invention Grant
- Patent Title: Etchant, etching method using same, and method for manufacturing semiconductor substrate product
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Application No.: US15245593Application Date: 2016-08-24
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Publication No.: US10062580B2Publication Date: 2018-08-28
- Inventor: Atsushi Mizutani , Tetsuya Kamimura
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2014-035630 20140226
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; C03C15/00 ; C03C25/68 ; H01L21/3213 ; C23F1/10 ; C23F1/14 ; H01L21/02 ; C23F1/00 ; C23F1/26 ; C23F1/30 ; H01L29/66 ; H01L29/78
Abstract:
Provided is an etchant for a semiconductor process, which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation, and water.
Public/Granted literature
- US20160365254A1 ETCHANT, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT Public/Granted day:2016-12-15
Information query
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