Invention Grant
- Patent Title: Method of etching a porous dielectric material
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Application No.: US14142124Application Date: 2013-12-27
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Publication No.: US10062602B2Publication Date: 2018-08-28
- Inventor: Nicolas Posseme , Sebastien Barnola , Olivier Joubert , Srinivas Nemani , Laurent Vallier
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT , CNRS Centre National de la Recherche Scientifique , APPLIED MATERIALS, Inc.
- Applicant Address: FR Paris FR Paris US CA Santa Clara
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CNRS—Centre National de la Recherche Scientifique,APPLIED MATERIALS, Inc
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CNRS—Centre National de la Recherche Scientifique,APPLIED MATERIALS, Inc
- Current Assignee Address: FR Paris FR Paris US CA Santa Clara
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1262910 20121228
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/768 ; H01L21/02
Abstract:
The invention relates to a method of etching a layer of porous dielectric material, characterized in that the etching is performed in a plasma formed from at least one silicon-based gas mixed with oxygen (O2) and/or nitrogen (N2) so as to grow a passivation layer all along said etching, at least on flanks of the layer of porous dielectric material and wherein the silicon-based gas is taken from all the compounds of the type SixHy for which the ratio x/y is equal or greater than 0.3 or is taken from all the compounds of the following types: SixFy and SixCly, where x is the proportion of silicon (Si) in the gas and y is the proportion of fluorine (F) or chlorine (Cl) or hydrogen (H) in the gas.
Public/Granted literature
- US20140187035A1 METHOD OF ETCHING A POROUS DIELECTRIC MATERIAL Public/Granted day:2014-07-03
Information query
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