Invention Grant
- Patent Title: Stacked nanowire devices
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Application No.: US15628821Application Date: 2017-06-21
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Publication No.: US10062615B2Publication Date: 2018-08-28
- Inventor: Kangguo Cheng , Ramachandra Divakaruni , Juntao Li
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; H01L27/092 ; H01L21/02 ; H01L21/3065 ; H01L21/225 ; H01L21/324 ; H01L29/66 ; H01L29/417
Abstract:
A semiconductor device comprises first stack of nanowires arranged on a substrate comprises a first nanowire and a second nanowire, the second nanowire is arranged substantially co-planar in a first plane with the first nanowire the first nanowire and the second nanowire arranged substantially parallel with the substrate, a second stack of nanowires comprises a third nanowire and a fourth nanowire, the third nanowire and the fourth nanowire arranged substantially co-planar in the first plane with the first nanowire, and the first nanowire and the second nanowire comprises a first semiconductor material and the third nanowire and the fourth nanowire comprises a second semiconductor material, the first semiconductor material dissimilar from the second semiconductor material.
Public/Granted literature
- US20170294358A1 STACKED NANOWIRE DEVICES Public/Granted day:2017-10-12
Information query
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