- Patent Title: Semiconductor device having improved heat dissipation efficiency
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Application No.: US15386764Application Date: 2016-12-21
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Publication No.: US10062632B2Publication Date: 2018-08-28
- Inventor: Haruhiko Murakami , Rei Yoneyama , Yoshitaka Kimura , Takayuki Shirahama
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2016-083444 20160419
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/36 ; H01L23/34 ; H01L23/367 ; H01L23/373 ; H01L23/00
Abstract:
A semiconductor device includes a base plate, a case, a power semiconductor element, and a control semiconductor element. Case is provided on base plate. Power semiconductor element is disposed over base plate in case. Control semiconductor element is disposed in case. Case has an opening formed therein opposite to base plate. The semiconductor device further includes a cover to close opening in case. Cover has a hole formed in at least a portion of a region overlapping control semiconductor element in plan view.
Public/Granted literature
- US20170301603A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-10-19
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