Multi-time programmable (MTP) memory cells, integrated circuits including MTP memory cells, and methods for fabricating MTP memory cells are provided. In an embodiment, an MTP memory cell includes a semiconductor substrate, a p-well formed in the semiconductor substrate, and an n-well formed in the semiconductor substrate and isolated from the p-well. The MTP memory cell further includes a p-channel transistor disposed over the n-well and including a transistor gate. Also, the MTP memory cell includes a p-channel capacitor disposed over the p-well and including a capacitor gate. The capacitor gate is coupled to the transistor gate.