Invention Grant
- Patent Title: Image sensor device and method
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Application No.: US15700861Application Date: 2017-09-11
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Publication No.: US10062728B2Publication Date: 2018-08-28
- Inventor: Jeng-Shyan Lin , Dun-Nian Yaung , Feng-Chi Hung , Jen-Cheng Liu , Shuang-Ji Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.
Public/Granted literature
- US20170373116A1 Image Sensor Device and Method Public/Granted day:2017-12-28
Information query
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