A semiconductor rectifying device includes a substrate of a first conductivity type, an epitaxial layer of the first conductivity type, a filling structure, an upper electrode, a guard ring, and a guard layer. The epitaxial layer defines a plurality of trenches thereon. The filling structure includes an insulating material formed on the inner surface of the trench and a conductive material filled in the trench. A doped region of a second conductivity type is formed in the surface of the epitaxial layer between the filling structures. A method of manufacturing a semiconductor rectifying device includes forming an epitaxial layer of a first conductivity type on a substrate of the first conductivity type, defining a plurality of trenches on the epitaxial layer, forming a plurality of filling structures in the plurality of trenches, and forming a doped region in the epitaxial layer between the filling structures.