Invention Grant
- Patent Title: Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device
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Application No.: US15250638Application Date: 2016-08-29
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Publication No.: US10062757B2Publication Date: 2018-08-28
- Inventor: Fabrizio Fausto Renzo Toia , Claudio Contiero , Elisabetta Pizzi , Simone Dario Mariani
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Priority: IT102016000019688 20160225
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/10 ; H01L29/78 ; H01L29/40 ; H01L21/02 ; H01L21/324 ; H01L23/535 ; H01L21/74

Abstract:
A semiconductor device includes: a semiconductor body including an active region that houses an electronic component and a passive dielectric region surrounding the active region; a conductive buried region, of metallic material or metallic alloy, which extends in the semiconductor body in the active region; and one or more electrical contacts, of metallic material, which extend between the conductive buried region and a top surface of the semiconductor body, and form respective paths for electrical access to the conductive buried region.
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