Invention Grant
- Patent Title: FinFET device
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Application No.: US15652271Application Date: 2017-07-18
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Publication No.: US10062780B2Publication Date: 2018-08-28
- Inventor: Chun Hsiung Tsai , Chien-Tai Chan , Ziwei Fang , Kei-Wei Chen , Huai-Tei Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/223 ; H01L21/265 ; H01L29/66
Abstract:
A FinFET device and a method of forming the same are disclosed. In accordance with some embodiments, a FinFET device includes a substrate having at least one fin, a gate stack across the at least one fin, a strained layer aside the gate stack and a silicide layer over the strained layer. The strained layer has a boron surface concentration greater than about 2E20 atom/cm3 within a depth range of about 0-5 nm from a surface of the strained layer.
Public/Granted literature
- US20170323971A1 FINFET DEVICE Public/Granted day:2017-11-09
Information query
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