Invention Grant
- Patent Title: Method of producing III nitride semiconductor light-emitting device and III nitride semiconductor light-emitting device
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Application No.: US15533138Application Date: 2015-12-07
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Publication No.: US10062806B2Publication Date: 2018-08-28
- Inventor: Takehiko Fujita , Yasuhiro Watanabe
- Applicant: DOWA Electronics Materials Co., Ltd.
- Applicant Address: JP Chiyoda-ku, Tokyo
- Assignee: DOWA Electronics Materials Co., Ltd.
- Current Assignee: DOWA Electronics Materials Co., Ltd.
- Current Assignee Address: JP Chiyoda-ku, Tokyo
- Agency: Kenja IP Law PC
- Priority: JP2014-248293 20141208
- International Application: PCT/JP2015/006065 WO 20151207
- International Announcement: WO2016/092804 WO 20160616
- Main IPC: H01L33/14
- IPC: H01L33/14 ; H01L33/06 ; H01L33/32 ; H01L33/00
Abstract:
We propose a method of producing a III nitride semiconductor light-emitting device including a p-type semiconductor layer, in which the p-type semiconductor layer is formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layer made of AlyGa1-yN (b
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