Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15706438Application Date: 2017-09-15
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Publication No.: US10063205B2Publication Date: 2018-08-28
- Inventor: Masakazu Mizokami
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn I.P Law Group, PLLC.
- Priority: JP2016-205906 20161020
- Main IPC: H04K1/02
- IPC: H04K1/02 ; H04L25/03 ; H04L25/49 ; H03G3/30 ; G01R25/04 ; H03F1/02 ; H03F3/217 ; H03F3/24

Abstract:
In a related-art semiconductor device, there is a problem that a second-order harmonic distortion originating in a power amplifier driven by a rectangular-wave signal cannot be effectively suppressed. According to an embodiment, a semiconductor device generates a transmission signal RF_OUT for driving an antenna by receiving first transmission pulses INd_P and second transmission pulses INd_N having a duty ratio lower than 50%, adjusting a phase difference between the first and second transmission pulses INd_P and INd_N to a predefined phase difference, and supplying the phase-difference-adjusted first and second transmission pulses INd_P and INd_N to a power amplifier 54.
Public/Granted literature
- US20180115291A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-04-26
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