Invention Grant
- Patent Title: Method of cleaning the filament and reactor's interior in FACVD
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Application No.: US14525902Application Date: 2014-10-28
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Publication No.: US10066293B2Publication Date: 2018-09-04
- Inventor: Jozef Brcka , Osayuki Akiyama
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood Herron & Evans LLP
- Main IPC: B08B7/00
- IPC: B08B7/00 ; C23C16/44 ; C23C16/46 ; C23C16/503 ; C23C16/52 ; H01J37/32

Abstract:
A method of operating a filament assisted chemical vapor deposition (FACVD) system. The method includes depositing a film on a substrate in a reactor of the FACVD system. During the depositing, a DC power is supplied to a heater assembly to thermally decompose a film forming material. The method also includes cleaning the heater assembly, or an interior surface of the reactor, or both. During the cleaning, an alternating current is supplied to the heater assembly to energize a cleaning media into a plasma.
Public/Granted literature
- US20150044390A1 METHOD OF CLEANING THE FILAMENT AND REACTOR'S INTERIOR IN FACVD Public/Granted day:2015-02-12
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