Invention Grant
- Patent Title: Device for producing a mono-crystalline sheet of semiconductor material from a molten alloy held between at least two aperture elements
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Application No.: US15262138Application Date: 2016-09-12
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Publication No.: US10066312B2Publication Date: 2018-09-04
- Inventor: Mikael T. Bjoerk , Heike E. Riel , Heinz Schmid
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Fleit Gibbons Gutman Bongini Bianco PL
- Agent Jon A. Gibbons
- Priority: EP10164535 20100531
- Main IPC: C30B15/08
- IPC: C30B15/08 ; C30B11/10 ; C30B11/12 ; C30B13/18 ; H01L31/18 ; C30B11/00 ; C30B11/02 ; C30B15/00 ; C30B21/06 ; C30B29/06 ; C30B29/64 ; H01L31/0312 ; H01L31/036

Abstract:
A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.
Public/Granted literature
- US20170009372A1 PRODUCING A MONO-CRYSTALLINE SHEET OF SEMICONDUCTOR MATERIAL Public/Granted day:2017-01-12
Information query
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