Invention Grant
- Patent Title: Crystal growing systems and methods including a transparent crucible
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Application No.: US15216351Application Date: 2016-07-21
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Publication No.: US10066314B2Publication Date: 2018-09-04
- Inventor: Richard J. Phillips , Soubir Basak , Gaurab Samanta
- Applicant: SunEdison Semiconductor Limited (UEN201334164H)
- Applicant Address: TW Hsinchu
- Assignee: GlobalWafers Co., Ltd.
- Current Assignee: GlobalWafers Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Armstrong Teasdale LLP
- Main IPC: C30B15/12
- IPC: C30B15/12 ; C30B15/14 ; C30B29/06

Abstract:
A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.
Public/Granted literature
- US20170022631A1 CRYSTAL GROWING SYSTEMS AND METHODS INCLUDING A TRANSPARENT CRUCIBLE Public/Granted day:2017-01-26
Information query
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