Invention Grant
- Patent Title: Single crystal growing apparatus
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Application No.: US15100597Application Date: 2014-11-19
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Publication No.: US10066315B2Publication Date: 2018-09-04
- Inventor: In Sik Bang , Cheol Hwan Kim
- Applicant: SK SILTRON CO., LTD.
- Applicant Address: KR Gumi-si, Gyeongsangbuk-Do
- Assignee: SK SILTRON CO., LTD.
- Current Assignee: SK SILTRON CO., LTD.
- Current Assignee Address: KR Gumi-si, Gyeongsangbuk-Do
- Agency: KED & Associates, LLP
- Priority: KR10-2013-0148977 20131203
- International Application: PCT/KR2014/011109 WO 20141119
- International Announcement: WO2015/083955 WO 20150611
- Main IPC: C30B17/00
- IPC: C30B17/00 ; C30B15/14 ; C30B35/00 ; C30B15/20 ; C30B29/20 ; C30B11/00

Abstract:
An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals.
Public/Granted literature
- US20160298260A1 SINGLE CRYSTAL GROWING APPARATUS Public/Granted day:2016-10-13
Information query
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