An oxygen sensor that has both an n-type oxygen sensing portion comprising an n-type semiconductor layer and a p-type oxygen sensing portion comprising an p-type semiconductor layer. The n-type sensing portion and the p-type sensing portion share the common electrode. The n-type semiconductor layer and the p-type semiconductor layer attach directly to the common electrode, but are not in physical contact with each other such that a lateral gap exists between the n-type semiconductor layer and the p-type semiconductor layer. The air:fuel ratio for a combustion process may be determined, using the same oxygen sensor, across a range of air:fuel values in both the rich and lean regions; as such, the oxygen sensor may act as a wideband oxygen sensor.