Invention Grant
- Patent Title: Band-gap reference circuit
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Application No.: US15366267Application Date: 2016-12-01
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Publication No.: US10067518B2Publication Date: 2018-09-04
- Inventor: Chengwei Tang
- Applicant: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Applicant Address: CN Shanghai
- Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN201610268920 20160427
- Main IPC: G05F1/46
- IPC: G05F1/46 ; G05F1/625 ; H03K17/60 ; H03K17/687

Abstract:
A band-gap reference circuit including: mirror current branch circuits, band-gap paths, and an operational amplifier. Each mirror current branch circuit includes a mirror PMOS transistor and an auxiliary PMOS transistor. A drain of each mirror PMOS transistor is connected with a source of a corresponding auxiliary PMOS transistor, and a drain of said each auxiliary PMOS transistor is connected to a top end of a corresponding band-gap path, each gate of each mirror PMOS transistor is connected with an output port of the operational amplifier. A gate of each auxiliary PMOS transistor is connected to a first bias voltage. A substrate electrode of each mirror and auxiliary transistor is all connected to a source voltage. The output port of the operational amplifier outputs a high level less than the source voltage, the first bias voltage is less than an output voltage signal of the operational amplifier.
Public/Granted literature
- US20170315576A1 BAND-GAP REFERENCE CIRCUIT Public/Granted day:2017-11-02
Information query
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