A memory device includes a control circuit configured to (i) start a first application of a first voltage between a first conductive layer and a third conductive layer, (ii) start a second application of the first voltage between a second conductive layer and the third conductive layer after a lapse of a first delay time since the start of the first application of the first voltage, and (iii) start an application of a second voltage, which is smaller than the first voltage, between the first conductive layer and the third conductive layer after a lapse of a second delay time since the start of the second application of the first voltage between the second conductive layer and the third conductive layer.