Invention Grant
- Patent Title: Lead frame connected with heterojunction semiconductor body
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Application No.: US15215208Application Date: 2016-07-20
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Publication No.: US10068780B2Publication Date: 2018-09-04
- Inventor: Gerhard Prechtl , Oliver Haeberlen , Balamurugan Karunamurthy
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015111838 20150721
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/495 ; H01L29/778 ; H01L29/423 ; H01L29/08 ; H01L29/20

Abstract:
A semiconductor component includes a semiconductor chip including a first semiconductor body comprising silicon and a second semiconductor body attached to an upper side of the first semiconductor body and comprising a III-nitride, and a lead-frame connected with the first semiconductor body. A thickness ratio between a thickness of the semiconductor chip and a thickness of the lead-frame is smaller than 1.3 or larger than 1.9.
Public/Granted literature
- US20170025523A1 Semiconductor Component and Manufacturing Method Therefor Public/Granted day:2017-01-26
Information query
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