Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15294797Application Date: 2016-10-17
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Publication No.: US10068808B2Publication Date: 2018-09-04
- Inventor: Li-Wei Feng , Shih-Hung Tsai , Chao-Hung Lin , Hon-Huei Liu , Shih-Fang Hong , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510062339 20150206
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/225 ; H01L21/324 ; H01L27/092 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device includes: a fin-shaped structure on a substrate, in which the fin-shaped structure includes a top portion and a bottom portion; a doped layer around the bottom portion of the fin-shaped structure; a first liner on the doped layer, and a second liner on the top portion and the bottom portion of the fin-shaped structure. Preferably, the first liner and the second liner are made of different material.
Public/Granted literature
- US20170033019A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-02-02
Information query
IPC分类:
