Invention Grant
- Patent Title: Trench silicide with self-aligned contact vias
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Application No.: US15663145Application Date: 2017-07-28
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Publication No.: US10068850B2Publication Date: 2018-09-04
- Inventor: Josephine B. Chang , Michael A. Guillorn , Fei Liu , Adam M. Pyzyna
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/532 ; H01L23/522 ; H01L29/45 ; H01L21/8234 ; H01L23/485 ; H01L21/768 ; H01L21/02
Abstract:
A modified trench metal-semiconductor alloy formation method involves depositing a layer of a printable dielectric or a sacrificial carbon material within a trench structure and over contact regions of a semiconductor device, and then selectively removing the printable dielectric or sacrificial carbon material to segment the trench and form plural contact vias. A metallization layer is formed within the contact vias and over the contact regions.
Public/Granted literature
- US20170330830A1 TRENCH SILICIDE WITH SELF-ALIGNED CONTACT VIAS Public/Granted day:2017-11-16
Information query
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