Invention Grant
- Patent Title: Semiconductor device including a connection unit and semiconductor device fabrication method of the same
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Application No.: US15062035Application Date: 2016-03-04
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Publication No.: US10068870B2Publication Date: 2018-09-04
- Inventor: Norihiro Nashida , Hideyo Nakamura , Yoko Nakamura
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kasasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kasasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2015-141314 20150715
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/00 ; H05K5/00 ; H01L23/00 ; H01L21/48 ; H01L23/498 ; H01L25/065 ; H01L25/07 ; H01L25/11 ; H01L25/00 ; H01L23/31 ; H01L23/40
Abstract:
A semiconductor device includes a plurality of semiconductor units each including a laminated substrate formed by laminating an insulating board and a circuit board and a semiconductor element joined to the circuit board using a joining material which irreversibly makes a phase transition into a solid-phase state. In addition, the semiconductor device may include a base plate to which each of the plurality of semiconductor units is joined using solder and a connection unit which electrically connects the plurality of semiconductor units in parallel.
Public/Granted literature
- US20170018524A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD Public/Granted day:2017-01-19
Information query
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