Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15479887Application Date: 2017-04-05
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Publication No.: US10068871B2Publication Date: 2018-09-04
- Inventor: Motoharu Haga , Kaoru Yasuda
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2016-079856 20160412
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/31 ; H01L23/492 ; H01L23/498

Abstract:
A semiconductor device includes a semiconductor substrate with a wiring layer formed thereon, an insulating film formed on the semiconductor substrate so as to cover the wiring layer and having a pad opening exposing a portion of the wiring layer as a pad, a front surface protection film formed on the insulating film and being constituted of an insulating material differing from the insulating film and having a second pad opening securing exposure of at least a portion of the pad, a seed layer formed on the pad, and a plating layer formed on the seed layer.
Public/Granted literature
- US20170294400A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-10-12
Information query
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