Invention Grant
- Patent Title: Semiconductor device with dummy pattern in high-voltage region and method of forming the same
-
Application No.: US15437824Application Date: 2017-02-21
-
Publication No.: US10068900B1Publication Date: 2018-09-04
- Inventor: Chin Yang , Chao-Sheng Cheng
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L29/423 ; H01L29/66 ; H01L21/8234
Abstract:
A semiconductor device includes a substrate having a high-voltage (HV) region; HV gate structures formed in the HV region of the substrate; a HV dummy pattern disposed in the HV region, and the HV dummy pattern comprising at least a semiconductor portion and a dummy HM stack disposed on the semiconductor portion, wherein a height (hS) of the semiconductor portion of the HV dummy pattern is smaller than a height (hHV-g) of a HV gate electrode of one of the HV gate structures.
Public/Granted literature
- US20180240798A1 SEMICONDUCTOR DEVICE WITH DUMMY PATTERN IN HIGH-VOLTAGE REGION AND METHOD OF FORMING THE SAME Public/Granted day:2018-08-23
Information query
IPC分类:
