Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US14714352Application Date: 2015-05-18
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Publication No.: US10068919B2Publication Date: 2018-09-04
- Inventor: Chin-Sheng Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510189060 20150421
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/84 ; H01L27/06 ; H01L29/66 ; H01L21/8258 ; H01L27/092 ; H01L29/78
Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes a first transistor and a second transistor. The first transistor is disposed on a substrate and comprises a gate electrode, a gate dielectric layer and a first source/drain. The second transistor includes the gate electrode and a channel layer disposed on the gate electrode.
Public/Granted literature
- US20160315100A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2016-10-27
Information query
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