Invention Grant
- Patent Title: FinFET devices with multiple channel lengths
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Application No.: US15267193Application Date: 2016-09-16
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Publication No.: US10068922B2Publication Date: 2018-09-04
- Inventor: Effendi Leobandung , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/02 ; H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L21/033 ; H01L21/8234 ; H01L21/84 ; H01L27/088
Abstract:
A continuous fin having a first segment and a second segment in a semiconductor layer, the first segment is arranged at an angle relative to the second segment, and a first gate and a second gate substantially parallel to each other, the first gate substantially covering sides and a top of a portion of the first segment of the continuous fin, the second gate substantially covering sides and a top of a portion of the second segment of the continuous fin.
Public/Granted literature
- US20170005114A1 FINFET DEVICES WITH MULTIPLE CHANNEL LENGTHS Public/Granted day:2017-01-05
Information query
IPC分类:
