Invention Grant
- Patent Title: Array substrate manufacturing method and array substrate
-
Application No.: US15031279Application Date: 2016-02-29
-
Publication No.: US10068933B2Publication Date: 2018-09-04
- Inventor: Si Deng
- Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Wuhan, Hubei
- Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Wuhan, Hubei
- Agent Leong C. Lei
- Priority: CN201610084686 20160214
- International Application: PCT/CN2016/074791 WO 20160229
- International Announcement: WO2017/136967 WO 20170817
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/12 ; H01L29/786 ; H01L29/49 ; G02F1/1368 ; G02F1/1362 ; G02F1/1333 ; G02F1/1343

Abstract:
The present invention provides an array substrate manufacturing method and an array substrate. The array substrate manufacturing method of the present invention uses an organic photoresist material to form a passivation protection layer (90) for substituting the conventional passivation protection layer that is made of a silicon nitride material and applies one mask to subject the passivation protection layer (90) and a planarization layer (70) to exposure and development so as to obtain a third via (91) that is located above the first drain electrode (62) and a fourth via (92) that is located above the second drain electrode (64) and, thus, compared the prior art techniques, saves one mask and reduces one etching process so as to achieve the purposes of simplifying the manufacturing process and saving manufacturing cost. The array substrate of the present invention has a simple structure and low manufacturing cost and possesses excellent electrical performance.
Public/Granted literature
- US20180047764A1 ARRAY SUBSTRATE MANUFACTURING METHOD AND ARRAY SUBSTRATE Public/Granted day:2018-02-15
Information query
IPC分类: