Invention Grant
- Patent Title: Image lag free pixel
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Application No.: US15545413Application Date: 2015-01-22
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Publication No.: US10068935B2Publication Date: 2018-09-04
- Inventor: Daniel Gaebler , Xuezhou Cao
- Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AG
- Applicant Address: DE Erfurt
- Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG
- Current Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG
- Current Assignee Address: DE Erfurt
- Agency: Nixon & Vanderhye PC
- International Application: PCT/EP2015/051274 WO 20150122
- International Announcement: WO2016/116161 WO 20160728
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A CMOS image sensor pixel (200) comprising a photosensitive element (101) for generating a charge in response to incident light; a plurality of charge storage elements (103); a plurality of transfer gates (102) for enabling the transfer of charge between the photosensitive element and an associated one of the charge storage elements; and one or more first electrical connections (201) for placing at least two of the plurality of charge storage elements in mutual electrical contact.
Public/Granted literature
- US20180019272A1 IMAGE LAG FREE PIXEL Public/Granted day:2018-01-18
Information query
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