Invention Grant
- Patent Title: Semiconductor channel-stop layer and method of manufacturing the same
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Application No.: US14683518Application Date: 2015-04-10
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Publication No.: US10068966B2Publication Date: 2018-09-04
- Inventor: Fumitake Mieno
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201410371055 20140731
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/417 ; H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L29/165 ; H01L27/092 ; H01L21/8238 ; H01L21/762
Abstract:
A method for manufacturing a semiconductor device may include forming a semiconductor portion, forming a doped portion, and forming a dielectric member. A side of the dielectric member abuts each of the semiconductor portion and the doped portion. A first half of the doped portion is positioned between the semiconductor portion and a second half of the doped portion. A dopant concentration of the second half of the doped portion is greater than a dopant concentration of the first half of the doped portion.
Public/Granted literature
- US20160035826A1 SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD Public/Granted day:2016-02-04
Information query
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