Invention Grant
- Patent Title: Semiconductor device with opposite conductivity-type impurity regions between source and trench gate for reducing leakage
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Application No.: US15157865Application Date: 2016-05-18
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Publication No.: US10068972B2Publication Date: 2018-09-04
- Inventor: Masahiro Sugimoto , Sachiko Aoi , Shoji Mizuno , Shinichiro Miyahara
- Applicant: Toyota Jidosha Kabushiki Kaisha
- Applicant Address: JP Toyota-shi
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-shi
- Agency: Dinsmore & Shohl LLP
- Priority: JP2015-107287 20150527
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/423 ; H01L29/16
Abstract:
A semiconductor device is provided with a semiconductor substrate and a trench gate. The semiconductor substrate is provided with a drift region of a first conductive type, wherein the drift region is in contact with the trench gate; a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate; a source region of the first conductive type, wherein the source region is disposed above the body region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate; and a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate.
Public/Granted literature
- US20160351665A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-12-01
Information query
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