A power MOSFET IC device including an array of MOSFET cells formed in a semiconductor substrate. The array of MOSFET cells comprises an interior region of interior MOSFET cells and an outer edge region of peripheral MOSFET cells, each interior MOSFET cell of the interior region of the array comprising a pair of interior MOSFET devices coupled to each other at a common drain contact. In an example embodiment, each interior MOSFET device includes a source contact (SCT) trench extended into a substrate contact region of the semiconductor substrate. The SCT trench is provided with a length less than a linear portion of a polysilicon gate of the interior MOSFET device, wherein the SCT trench is aligned to the polysilicon gate having a curvilinear layout geometry.