A diode includes an n type semiconductor layer including an n type cathode layer and an n type drift layer that has an impurity concentration lower than the n type cathode layer and that is disposed on the n type cathode layer, a p type anode layer disposed at a surface part of the n type drift layer, a p type hole implantation layer selectively disposed at the n type cathode layer, an anode electrode electrically connected to the p type anode layer, and a cathode electrode electrically connected to the n type cathode layer and to the p type hole implantation layer, and the p type hole implantation layer has a diameter of 20 μm or more.