Invention Grant
- Patent Title: Wafer-level light emitting diode package and method of fabricating the same
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Application No.: US15389413Application Date: 2016-12-22
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Publication No.: US10069048B2Publication Date: 2018-09-04
- Inventor: Won Cheol Seo , Dae Sung Cho
- Applicant: Seoul Semiconductor Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2010-0092807 20100924; KR10-2010-0092808 20100924
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/56 ; H01L33/42 ; H01L33/50 ; H01L33/44 ; H01L33/40 ; H01L27/15 ; H01L33/38 ; H01L33/46 ; H01L33/62 ; H01L33/48 ; H01L33/10 ; H01L33/24 ; H01L33/64 ; H01L33/22 ; H01L33/58 ; H01L33/06 ; H01L33/12 ; H01L33/32 ; H01L33/20

Abstract:
Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.
Public/Granted literature
- US20170104139A1 WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-04-13
Information query
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