Invention Grant
- Patent Title: Semiconductor light emitting element and method for manufacturing the same
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Application No.: US14907650Application Date: 2014-07-25
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Publication No.: US10069049B2Publication Date: 2018-09-04
- Inventor: Shinichiro Inoue , Naoki Tamari
- Applicant: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY , STANLEY ELECTRIC CO., LTD.
- Applicant Address: JP Kyoto JP Tokyo
- Assignee: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIO,STANLEY ELECTRIC CO., LTD.
- Current Assignee: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIO,STANLEY ELECTRIC CO., LTD.
- Current Assignee Address: JP Kyoto JP Tokyo
- Agency: Keating & Bennett, LLP
- Priority: JP2013-158300 20130730
- International Application: PCT/JP2014/069705 WO 20140725
- International Announcement: WO2015/016150 WO 20150205
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/58 ; H01L33/00 ; H01L33/22

Abstract:
The semiconductor light emitting element is a semiconductor light emitting element comprising a semiconductor layer including a light emitting layer, wherein a surface of the semiconductor light emitting element includes a light extraction surface. At least one of the light extraction surface and an interface between two layers having different refractive indexes in the semiconductor light emitting element is provided with a periodic recessed and projecting structure having a period that exceeds 0.5 times as great as a wavelength of light emitted from the light emitting layer, and a minute recessed and projecting structure located on a surface of the periodic recessed and projecting structure and having an average diameter that is not more than 0.5 times as great as the wavelength of the light.
Public/Granted literature
- US20160163937A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-06-09
Information query
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