Invention Grant
- Patent Title: Piezoelectric resonator and method for manufacturing the same
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Application No.: US15002525Application Date: 2016-01-21
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Publication No.: US10069473B2Publication Date: 2018-09-04
- Inventor: Keiichi Umeda
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Nagaokakyo-shi, Kyoto-fu
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Nagaokakyo-shi, Kyoto-fu
- Agency: Arent Fox LLP
- Priority: JP2013-171570 20130821
- Main IPC: H03H9/13
- IPC: H03H9/13 ; H03H9/17 ; H03H9/21 ; H03H3/02 ; H03H9/05 ; H03H3/04

Abstract:
A piezoelectric resonator that includes a single crystal Si layer, a piezoelectric thin film formed from aluminum nitride and provided on the single crystal Si layer, and first and second electrodes provided so as to sandwich the piezoelectric thin film. An element excluding nitrogen and aluminum is doped into the piezoelectric thin film formed from aluminum nitride, and a synthetic acoustic velocity of portions of the piezoelectric resonator other than the single crystal Si layer substantially coincide with the acoustic velocity of the single crystal Si layer.
Public/Granted literature
- US20160156332A1 PIEZOELECTRIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-06-02
Information query
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