A solid-state image sensor acquires signals through sequential reading, in signal lines disposed along a column direction, of signals from pixels disposed in the form of a matrix. The solid-state image sensor has a plurality of first pixels that are disposed in the form of a matrix in the solid-state image sensor; and a plurality of second pixels having an in-pixel memory and disposed in the form of a matrix in columns different from those of the plurality of first pixels in the solid-state image sensor. A difference in exposure timings of the second pixels between adjacent rows is caused to be different from that of the first pixels between adjacent rows, through reading of signals from the plurality of second pixels after holding in the in-pixel memories for a predetermined charge retention time.