Invention Grant
- Patent Title: Power-down interrupt of nonvolatile dual in-line memory system
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Application No.: US15244745Application Date: 2016-08-23
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Publication No.: US10073744B2Publication Date: 2018-09-11
- Inventor: HyunJu Yoon
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0036638 20160328
- Main IPC: G06F11/14
- IPC: G06F11/14 ; G06F3/06 ; G11C5/04 ; G11C5/14 ; G11C7/20 ; G11C11/00 ; G11C14/00

Abstract:
A nonvolatile memory module includes volatile memory devices; a nonvolatile memory device; and a controller suitable for backing up data stored in the volatile memory devices or restoring data backed up in the nonvolatile memory device, according to a fail/recovery of power of the host, the controller including a power-down interrupt logic which interrupts a backup operation when the power of the host is recovered while performing the backup operation, the power-down interrupt logic including: a logic which determines whether sufficient erased blocks exist in the nonvolatile memory device; a logic which erases a new block when the sufficient erased bocks do not exist; and an interrupt backup logic which backs up a volatile memory device having data corresponding to the erased block, when a fail in the power of the host is detected or a backup operation is instructed from the host.
Public/Granted literature
- US20170277593A1 POWER-DOWN INTERRUPT OF NONVOLATILE DUAL IN-LINE MEMORY SYSTEM Public/Granted day:2017-09-28
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