Invention Grant
- Patent Title: Method for producing polycrystalline silicon
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Application No.: US15113332Application Date: 2015-01-16
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Publication No.: US10077192B2Publication Date: 2018-09-18
- Inventor: Stefan Faerber , Andreas Bergmann , Reiner Pech , Siegfried Riess
- Applicant: Wacker Chemie AG
- Applicant Address: DE Munich
- Assignee: WACKER CHEMIE AG
- Current Assignee: WACKER CHEMIE AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102014201096 20140122
- International Application: PCT/EP2015/050769 WO 20150116
- International Announcement: WO2015/110358 WO 20150730
- Main IPC: C01B33/035
- IPC: C01B33/035 ; C30B15/36

Abstract:
Production of highly pure comminuted polycrystalline silicon from polycrystalline silicon rods produced by the Siemens process is facilitated by removal of graphite residues from the electrode ends of the rods by removing the contaminated end portions by means of mechanical impulses.
Public/Granted literature
- US20170001868A1 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON Public/Granted day:2017-01-05
Information query
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