Invention Grant
- Patent Title: Memory controller, semiconductor device and method of controlling semiconductor device
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Application No.: US15047080Application Date: 2016-02-18
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Publication No.: US10078548B2Publication Date: 2018-09-18
- Inventor: Takuya Haga
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F11/10 ; G06F3/06 ; G06F12/02

Abstract:
According to one embodiment, a memory controller controlling write to and read from a 3D NAND flash memory including a plurality of blocks, one block being constituted by a plurality of pages stacked in a depth direction includes a frame generator that generates frame data including an error detecting code or an error correcting code, and a frame divider that divides the frame data to generate a plurality of divided frames including a first divided frame and a second divided frame. The first divided frame and the second divided frame are written into different pages from one another.
Public/Granted literature
- US20170075579A1 MEMORY CONTROLLER, SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING SEMICONDUCTOR DEVICE Public/Granted day:2017-03-16
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