Invention Grant
- Patent Title: Artificial neuron comprising a resistive memory having a stochastic behavior
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Application No.: US14315069Application Date: 2014-06-25
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Publication No.: US10078800B2Publication Date: 2018-09-18
- Inventor: Manan Suri , Giorgio Palma
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Baker & Hostetler LLP
- Priority: FR1356143 20130626
- Main IPC: G06N3/063
- IPC: G06N3/063 ; G06N3/04 ; G11C11/54 ; G11C13/00

Abstract:
A circuit for implementing an artificial neuron comprises: an integrator for an input signal to produce a voltage signal; a signal generator linked to the integrator output producing two output signals when the voltage is at or above a predetermined voltage, a first signal for an output pulse of the neuron and a second signal for a control pulse; a resistive memory comprising two terminals switching from a high to low resistance state in a time following a statistical distribution specific to the memory, a first terminal linked to the output of the integrator; a transistor linked to a branch at zero potential to a second terminal of the resistive memory, controlled by the second output signal such that in the presence of a pulse of voltage the resistive memory switches from its high resistance state to its low resistance state with a view to lowering the voltage.
Public/Granted literature
- US20150006455A1 ARTIFICIAL NEURON COMPRISING A RESISTIVE MEMORY Public/Granted day:2015-01-01
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