An object is to provide a memory element having a novel structure where data can be held even after power supply is stopped. The memory element includes a latch circuit, a first selection circuit, a second selection circuit, a first nonvolatile memory circuit, and a second nonvolatile memory circuit. The first nonvolatile memory circuit and the second nonvolatile memory circuit each include a transistor and a capacitor. The transistor included in each of the first nonvolatile memory circuit and the second nonvolatile memory circuit is a transistor in which a channel is formed in an oxide semiconductor film. The off-state current of such a transistor is extremely small. The transistor is turned off after data is input to a node where the transistor and the capacitor are connected to each other, and data can be held for a long time even after supply of power supply voltage is stopped.