Invention Grant
- Patent Title: Reduced voltage nonvolatile flash memory
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Application No.: US15216160Application Date: 2016-07-21
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Publication No.: US10079065B2Publication Date: 2018-09-18
- Inventor: Koji Sakui
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G11C11/56 ; G11C16/12 ; G11C16/34

Abstract:
Systems include a first semiconductor die comprising a charge pump to generate power supply signals, a second semiconductor die comprising a memory array and programming circuitry, and a bus connected to the first and second semiconductor dies to carry the power supply signals to the programming circuitry. The programming circuitry is adapted to program memory cells of the memory array so that at least one programmed threshold voltage level is less than a voltage level of the power supply signals.
Public/Granted literature
- US20160329102A1 REDUCED VOLTAGE NONVOLATILE FLASH MEMORY Public/Granted day:2016-11-10
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