A method of forming interconnects for semiconductor devices includes forming a lower insulating layer and a lower interconnect on a semiconductor substrate, forming an insulating pattern layer on the lower interconnect through self-assembly, forming an interlayer insulating layer and a trench mask on the insulating pattern layer, forming a preparatory via hole allowing the insulating pattern layer to be exposed by removing a portion of the interlayer insulating layer, forming a trench by etching the interlayer insulating layer using the trench mask, forming a via hole allowing the lower interconnect to be exposed by selectively etching the insulating pattern layer within the preparatory via hole, and filling the trench and the via hole with an conductive material.