Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US15434310Application Date: 2017-02-16
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Publication No.: US10079153B2Publication Date: 2018-09-18
- Inventor: Akifumi Gawase , Yukiteru Matsui , Takahiko Kawasaki
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L21/265 ; H01L21/306 ; H01L21/311 ; H01L21/04 ; H01L21/266 ; H01L21/425 ; H01L21/426 ; H01L29/16
Abstract:
In a substrate processing method according to the embodiment, a first material is implanted into a surface of a target film to modify the surface of the target film. The surface of the target film is dissolved to remove the surface of the target film by bringing a catalytic material close to the surface of the target film or by contacting the catalytic material to the surface of the target film while supplying a process solution on the surface of the target film which has been modified.
Public/Granted literature
- US20170250081A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2017-08-31
Information query
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