Invention Grant
- Patent Title: Insulating a via in a semiconductor substrate
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Application No.: US15601488Application Date: 2017-05-22
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Publication No.: US10079175B2Publication Date: 2018-09-18
- Inventor: Mukta G. Farooq , Jennifer A. Oakley , Kevin S. Petrarca , Nicole R. Reardon , Andrew H. Simon
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Kennedy Lenart Spraggins LLP
- Agent Steven Meyers; Joseph D. Downing
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/768 ; H01L49/02 ; H01L23/48 ; H01L23/532
Abstract:
Insulating a via in a semiconductor substrate, including: depositing, in the via, a dielectric layer; depositing, in the via, a barrier layer; allowing the barrier layer to oxidize; and depositing, in the via, a conducting layer.
Public/Granted literature
- US20170256447A1 INSULATING A VIA IN A SEMICONDUCTOR SUBSTRATE Public/Granted day:2017-09-07
Information query
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