Invention Grant
- Patent Title: Method of forming a semiconductor device
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Application No.: US15458038Application Date: 2017-03-14
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Publication No.: US10079180B1Publication Date: 2018-09-18
- Inventor: Yat-Kai Sun , Chao-Nan Chen , Hung-Lin Shih , Che-Hung Huang , Wei-Lun Hsu , Cheng-Chia Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/8234 ; H01L21/02 ; H01L21/3115 ; H01L21/311 ; H01L21/3213 ; H01L21/033 ; H01L21/308 ; H01L29/66
Abstract:
A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.
Public/Granted literature
- US20180269107A1 Method of Forming a Semiconductor Device Public/Granted day:2018-09-20
Information query
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