Invention Grant
- Patent Title: Semiconductor devices and methods for testing a gate insulation of a transistor structure
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Application No.: US15497002Application Date: 2017-04-25
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Publication No.: US10079187B2Publication Date: 2018-09-18
- Inventor: Daniel Beckmeier , Andreas Martin
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102016107953 20160428
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/66 ; G01R31/28 ; G01R31/26 ; H01L29/78
Abstract:
A semiconductor device includes a first test structure including a first portion of a conductive structure and a second portion of the conductive structure located within a first lateral wiring layer of a layer stack of the semiconductor device. The first portion of the conductive structure of the first test structure is electrically connected to the second portion of the conductive structure of the first test structure through a third portion located within a second lateral wiring layer of the layer stack arranged above the first lateral wiring layer. Further, the first portion of the conductive structure of the first test structure is electrically connected to a gate of a test transistor structure, a doping region of the test transistor structure or an electrode of a test capacitor. Additionally, the first portion of the conductive structure of the first test structure is electrically connected to a first test pad of the first test structure.
Public/Granted literature
- US20170316991A1 Semiconductor Devices and Methods for Testing a Gate Insulation of a Transistor Structure Public/Granted day:2017-11-02
Information query
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