A power semiconductor device has a metal molded body forming a first connecting conductor. From a first main surface of the metal molded body there is a first recess having a first base in which a first power semiconductor component is arranged which faces the first base and is connected in an electrically conductive manner. From a second main surface of the metal molded body, a second recess has a second base, and a second power semiconductor component is arranged with the first contact surface thereof associated with the second base connected in an electrically conductive manner to this base. An insulating material layer is on both main surfaces, filling and completely covering the recess, wherein the first insulating layer has an electrically conductive first via which connects a second contact surface of the first power semiconductor component in an electrically conductive manner to a first conducting surface arranged on the first insulating layer.