Invention Grant
- Patent Title: Graphene film manufacturing method and semiconductor device manufacturing method
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Application No.: US14631033Application Date: 2015-02-25
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Publication No.: US10079209B2Publication Date: 2018-09-18
- Inventor: Daiyu Kondo , Haruhisa Nakano
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLC
- Priority: JP2014-038895 20140228
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L23/532 ; H01L29/16 ; H01L29/66 ; H01L21/285 ; H01L21/768 ; H01L21/02 ; H01L21/04 ; H01L29/778 ; H01L29/786 ; H01L29/45 ; H01L29/49 ; H01L29/51
Abstract:
A method of manufacturing a graphene film manufactures a graphene film in good state without generating wrinkles and stresses and leaving residues of the resin. The method of manufacturing a graphene film comprises forming a catalyst metal film on a substrate; synthesizing a graphene film on the catalyst metal film; and removing the metal catalyst film in an oxidation atmosphere of an oxidizer and transferring the graphene film to the substrate.
Public/Granted literature
- US20150249034A1 GRAPHENE FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2015-09-03
Information query
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